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    • A comparative study on the structural and spectroscopic ellipsometry characterizations of (Co, Ni)-doped SnO$_2$ nanostructured films spin-coated on glass substrates

      SAHAR MORADI ATEFEH NAZARI SETAYESH HASSAN SEDGHI

      Volume 46 Published: 28 December 2022 Article ID 0005

    • Fulltext

       

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      https://www.ias.ac.in/article/fulltext/boms/046/0005

    • Keywords

       

      Sol–gel spin coating; spectroscopic ellipsometry; (Co-, Ni)-doped SnO$_2$thin films; optoelectronic properties; structural properties.

    • Abstract

       

      The pure, Co- and Ni-doped SnO$_2$ nanostructured films were coated on glass by spin coating method. The influence of doping Ni and Co metal ions on optoelectronic and structural properties of the pure film were analysed by X-ray diffraction (XRD) and spectroscopic ellipsometry (SE) techniques. XRD results revealed that substitution of Co$^{2+}$ and Ni$^{2+}$ into the tetragonal rutile structure of SnO$_2$ changes the lattice parameters (a and c) slightly and decreases the grain size (d). The refractive index (n), the extinction coefficient (k), optical transmittance (T) and dielectric constant (${\varepsilon}$) were determined for samples using SE technique. According to SE analysis, the incorporation of Ni and Co ions decreases the optical transparency (T%) and increases the ratio of charge carrier concentration to effective mass (${N/m}^*$). The results confirmed that the ${N/m}^*$ increases lead to decreasing of the sheet resistance ($R_{sh}$) values of doped SnO$_2$ films compared to the pure one. The bandgap energy ($E_g$) of films were also calculated. According to the literature, the $E_g$ value of the pure SnO$_2$ thin film is 3.8 eV. This amount decreased to 3.7 and 3.55 eV for Co- and Ni-doped SnO$_2$ films, respectively. The $E_g$ value decrease by Co and Ni incorporation is related to the increase of carrier concentration due to the Moss-Burstein effect.

    • Author Affiliations

       

      SAHAR MORADI1 ATEFEH NAZARI SETAYESH HASSAN SEDGHI

      1. Department of Physics, Faculty of Science, Urmia University, Urmia 5756151818, Iran

    • Dates

       
      Published
      28 December 2022
      Manuscript received
      24 March 2022
      Accepted
      27 July 2022
      Final version published online
      28 December 2022

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