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Effect of annealing temperature on the microstructure and optoelectronic properties of niobium-doped anatase TiO$_2$ thin films grown on soda-lime glass substrate
Volume 45 Published: 26 October 2022 Article ID 0213
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https://www.ias.ac.in/article/fulltext/boms/045/0213 -
Keywords
Transparent conductor ;niobium-doped anatase TiO2 ;annealing ;microstructure ;optoelectronic properties. -
Abstract
In this work, we report on the growth of high-quality transparent conducting niobium-doped anatase TiO$_2$ (NTO) thin film on soda-lime glass substrate (SLG) by altering the annealing temperature. To this end, NTO films (with athickness of ${\sim}$131 nm) are deposited on SLG substrates at room temperature by radio frequency (RF) magnetron sputtering, following which these films are subjected to the post-deposition annealing at temperatures (T) in the range of 623 to 1023 K for 1 h at ${\sim}$2.2 9 10$^{–4}$ Pa. The crystallinity of these NTO films is considerably altered with T, which is found to effect significantly their overall optoelectronic properties. NTO film fabricated at T of 823 K exhibited the lowest electrical resistivity of 9.84 ${\times}$ 10$^{–3}$ ${\Omega}$ cm (with carrier concentration of 0.74 ${\times}$ 10$^{21}$ cm$^{–3}$ and carrier mobility of 0.85 cm$^2$ V$^{–1}$ s$^{–1}$) and an average visible transmittance of ${\sim}$76%. Apart from developing an understanding on the role of annealing temperature on the microstructural, optical and electrical properties of NTO films, this study also realized the growth of high-quality NTO film on the cost-effective SLG substrate.
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Author Affiliations
- Materials Engineering Discipline, Indian Institute of Technology Gandhinagar, Gandhinagar 382355, India
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Dates
- Published
- 26 October 2022
- Manuscript received
- 15 September 2021
- Accepted
- 16 June 2022
- Final version published online
- 26 October 2022
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Supplementary Material
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Bulletin of Materials Science
Volume 46, 2023
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