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      https://www.ias.ac.in/article/fulltext/boms/045/0203

    • Keywords

       

      Li-ZnO; field-emission scanning electron microscopy; gas sensor; XPS; NO$_2$; crystal defect.

    • Abstract

       

      In this study, we explore the influence of Li dopant on the morphological, electrical and structural properties of ZnO thin films employed for gas-sensing applications. The deposited thin-film gas sensors were evaluated using X-ray diffraction, field-emission scanning electron microscopy, X-ray photoelectron spectroscopy (XPS), and Hall measurements to assess the chemical and physical features of Li-ZnO thin-film gas sensors. All films are crystallized with hcpstructure confirmed from X-ray diffraction analysis. From field-emission scanning electron microscopy analysis, spherical and uneven distribution of particles is observed in all the thin-film samples. The conductivity of the thin-film gas sensorsobtained from the Hall-measurement system shows that all samples except 5wt%Li-ZnO exhibit n-type conductivity. XPS studies confirmed the presence of defect states in all deposited samples. Enhanced nitrogen dioxide (NO$_2$) gas-sensing properties by incorporating an alkali metal (Li, 1–10 wt%) in ZnO were explored. Gas sensing measurements reveal that 1wt% Li-ZnO thin films exhibit remarkable sensitivity (20.94) and fast response/recovery (3s/112s) time towards 45 ppm of NO$_2$ gas. The results are discussed with the influence of defect density states in ZnO and correlated with structural, morphological and electrical parameters.

    • Author Affiliations

       

      K K JASMI1 T ANTO JOHNY1 V S SIRIL2 V KUMAR3 K N MADHUSOODANAN2

      1. Department of Physics, St. Thomas’ College (Autonomous), Thrissur 680001, India
      2. Department of Instrumentation, Cochin University of Science and Technology, Cochin 682022, India
      3. Centre for Materials for Electronics Technology (C-MET), Thrissur 680581, India
    • Dates

       
  • Bulletin of Materials Science | News

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