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Effect of deposition pressure and annealing temperature on the microstructure and oxidation resistance of FeNbMoTaW films
BANDLA BHARATH KUMAR KATTA SAI KUMAR VENKATA GIRISH KOTNUR
Volume 45 Published: 27 September 2022 Article ID 0191
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https://www.ias.ac.in/article/fulltext/boms/045/0191 -
Keywords
High-entropy alloys ;powder targets ;magnetron sputtering ;thin films. -
Abstract
In this work, we report the effect of deposition pressure on the deposition of FeNbMoTaW thin films. Depositions were carried out at room temperature using DC-magnetron sputtering technique from a single target. The target was prepared in-house via high-energy mechanical milling and cold-pressing milled powders at room temperature. As-deposited films were amorphous. Films deposited at a pressure of 0.5 Pa showed a hardness of 13.05 ± 0.79 GPa. Air annealing studies reveal the transformation of amorphous FeNbMoTaW to crystalline oxide phases for temperatures exceeding 573 K. The delamination of films on annealing limits their application for temperatures greater than 573 K.
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Author Affiliations
BANDLA BHARATH KUMAR KATTA SAI KUMAR VENKATA GIRISH KOTNUR1
- School of Engineering Sciences and Technology (SEST), University of Hyderabad, Hyderabad 500 046, India
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Dates
- Published
- 27 September 2022
- Manuscript received
- 7 January 2022
- Accepted
- 7 June 2022
- Final version published online
- 27 September 2022
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Bulletin of Materials Science
Volume 46, 2023
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