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    • Enhancement of electrical, dielectric and magnetic properties of Cd- and Cu-doped NiO quantum dots for practical applications

      R A ZAGHLOOL N MAKRAM L A WAHAB

      Volume 45 Published: 9 September 2022 Article ID 0179

    • Fulltext

       

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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/045/0179

    • Keywords

       

      Doped NiO; structure; dielectric constants; ac conductivity; dc conductivity; magnetic properties.

    • Abstract

       

      In the present work, Ni$_{0.9}$X$_{0.1}$O (X = Cd or Cu or Cu + Cd) have been prepared using the chemical precipitation method. X-ray diffraction manifests that the prepared compositions are nanometre-sized with an average size 3–4 nm. The undoped and doped NiO exhibit fcc structure. The dc and ac conductivities of the as-prepared nanocompositions have been executed in the frequency range 50 Hz–5 MHz and in the temperature range 305–435 K. The acconductivity displays temperature and frequency dependence. The ac conductivity mechanism of the studied compositions was explained via the correlated barrier hopping conduction mechanism. The study of the magnetization property at room temperature shows weak ferromagnetic behaviour. Irradiating the samples by 100 kGy electron beam, it is observed that while a decrease in the magnetic coercivity is accounted for pure and Cd-doped NiO, its value has been increased in Cu and (Cd + Cu) doped NiO.

    • Author Affiliations

       

      R A ZAGHLOOL1 N MAKRAM2 L A WAHAB1

      1. Solid State and Accelerators Department, National Center for Radiation Research and Technology (NCRRT), Egyptian Atomic Energy Authority, Cairo 11787, Egypt
      2. Physics Department, Faculty of Science, Al-Azhar University, Cairo 11787, Egypt

    • Dates

       
      Published
      9 September 2022
      Manuscript received
      3 January 2022
      Accepted
      27 May 2022
      Final version published online
      9 September 2022

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