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      https://www.ias.ac.in/article/fulltext/boms/045/0105

    • Keywords

       

      Self-power photodetector; tensile stress; ZnO; GaN.

    • Abstract

       

      A self-powered, ZnO nanorod arrays (NRs)/GaN/Si heterojunction ultraviolet (UV) photodetector was synthesized straightforwardly. This high-performance device has an excellent response under UV radiation without bias. The tensile stress at the ZnO/GaN/Si interface presumably strengthened the built-in electric field, which effectively separated and extracted the photogenerated electron–hole pairs. These results may provide a new synthetic pathway towards low-cost, high-performance, self-powered ZnO/GaN heterojunction UV photodetectors.

    • Author Affiliations

       

      MINGNA YAN1 NAISEN YU1 2 3 SHIYU DU1 HAIOU LI2 YUNFENG WU1

      1. School of Physics and Materials Engineering, Dalian Minzu University, Dalian 116600, People’s Republic of China
      2. Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, People’s Republic of China
      3. School of Materials and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212000, People’s Republic of China
    • Dates

       
  • Bulletin of Materials Science | News

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