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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/045/0105

    • Keywords

       

      Self-power photodetector; tensile stress; ZnO; GaN.

    • Abstract

       

      A self-powered, ZnO nanorod arrays (NRs)/GaN/Si heterojunction ultraviolet (UV) photodetector was synthesized straightforwardly. This high-performance device has an excellent response under UV radiation without bias. The tensile stress at the ZnO/GaN/Si interface presumably strengthened the built-in electric field, which effectively separated and extracted the photogenerated electron–hole pairs. These results may provide a new synthetic pathway towards low-cost, high-performance, self-powered ZnO/GaN heterojunction UV photodetectors.

    • Author Affiliations

       

      MINGNA YAN1 NAISEN YU1 2 3 SHIYU DU1 HAIOU LI2 YUNFENG WU1

      1. School of Physics and Materials Engineering, Dalian Minzu University, Dalian 116600, People’s Republic of China
      2. Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, People’s Republic of China
      3. School of Materials and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212000, People’s Republic of China

    • Dates

       
      Published
      14 June 2022
      Manuscript received
      22 November 2021
      Accepted
      21 January 2022
      Final version published online
      14 June 2022

  • Bulletin of Materials Science | News

    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

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