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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/045/0046

    • Keywords

       

      Silicon; charge qubit; spin qubit; double quantum dot (DQD); coherence time; quantum information processing (QIP).

    • Abstract

       

      Pathbreaking advancements in the field of nanofabrication techniques have put qubit technology at the forefront of quantum computation. Thanks to Silicon (Si) with its unparalleled strong foundation in the existing classical computation, it is considered to be a promising candidate for the development of complementary metal-oxide semiconductor compatible quantum architecture. This review article vividly describes the underlying physics of the qubit operation in quantum dots. Further, the article gives an overview of the current state of the art technology and the remarkable progress made in the field of charge and spin qubits in Si and allied heterostructures in the last two decades. Emphasis has been given to address the challenges and the accomplishments made so far in the field of Si-based chargeand spin qubit technology. The article also discusses the future prospects of qubit technology and the measures being adopted worldwide for the physical realization of envisioned quantum devices.

    • Author Affiliations

       

      WASI UDDIN1 BISWAJIT KHAN1 SHEETAL DEWAN2 SAMARESH DAS1

      1. Center for Applied Research in Electronics, Indian Institute of Technology Delhi, New Delhi 110016, India
      2. School of Interdisciplinary Research, Indian Institute of Technology Delhi, New Delhi 110016, India

    • Dates

       
      Published
      3 March 2022
      Manuscript received
      29 July 2021
      Accepted
      15 October 2021
      Final version published online
      3 March 2022

  • Bulletin of Materials Science | News

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    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

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