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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/045/0039

    • Keywords

       

      Metal oxide semiconductor; high-k dielectric; leakage current; current conduction mechanism; barrier height.

    • Abstract

       

      Thin HfTiO$_x$ high-k gate dielectric (Ti ${\sim}$26.6%) has been sputter-deposited on strained Si$_{0.81}$Ge$_{0.19}$ heterolayers. The energy band discontinuities and interface properties were studied using X-ray photoelectron spectroscopy. The conduction band offset, and valance band offset between HfTiO$_x$ and Si$_{0.81}$Ge$_{0.19}$ were found to be 1.34 and 2.52 eV, respectively. Further, temperature-dependent (300–500 K) current density–voltage measurements (J–V) were utilized to explore the underlying leakage current conduction mechanism. The conductive dislocation and emission barrier heights at the hetero-interface have also been extracted from temperature-dependent J–V measurement. The barrier height of 1.22 to 2.02 eV for Schottky emission and 0.76 to 1.26 eV for Poole–Frenkel emission were estimated at the heterointerface. To better understand the conduction mechanism between the hetero-interface and temperature-dependent J–V, a calibrated TCAD simulation was carried out.

    • Author Affiliations

       

      P P MAITI1 2 AJIT DASH2 S GUHATHAKURATA2 S DAS3 ATANU BAG4 T P DASH5 G AHMAD6 C K MAITI7 S MALLIK2

      1. Biju Patnaik University of Technology, Rourkela 769004, India
      2. Department of Electronics and Communication Engineering, NIST (Autonomous), Berhampur 761008, India
      3. Department of Electronics and Communication Engineering, Silicon Institute of Technology, Bhubaneswar 751024, India
      4. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
      5. Department of Electronics and Communication Engineering, Siksha ‘O’ Anusandhan (Deemed to be University), Bhubaneswar 751030, India
      6. Department of Electrical Engineering, Dayalbagh Educational Institute, Agra 282005, India
      7. Department of Electronics and Communication Engineering, Indian Institute of Technology Kharagpur, Kharagpur 721302, India

    • Dates

       
      Published
      20 February 2022
      Manuscript received
      30 June 2021
      Accepted
      20 October 2021
      Final version published online
      20 February 2022

  • Bulletin of Materials Science | News

    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
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      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
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      Posted on July 25, 2019

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