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      https://www.ias.ac.in/article/fulltext/boms/045/0001

    • Keywords

       

      Topological materials; ARPES; de Haas-van Alphen effect.

    • Abstract

       

      In the family of transition-metal dichalcogenides (TMDs), PdTe$_2$ is well known due to its unique and unconventional topological states. Using angle-resolved photoemission spectroscopy (ARPES), we systematically studied the electronic structure of PdTe$_2$, as confirmed by our electronic band structure calculations. The latter confirms a type-II Dirac semimetal phase with the nodal point located at 0.5 eV below the Fermi level. We have used the de Haas-van Alphen (dHvA) oscillations in the magnetization measurements on a high-quality single crystal of type-II Dirac semimetal PdTe$_2$ to unveil its topological properties. Our findings not only contribute to a better understanding of topological band structure in PdTe2 but also help in understanding the origin of such novel states in similar materials. This study opens up the possibility of finding new class of quantum material with great significance, both from fundamental and applied fronts.

    • Author Affiliations

       

      JADUPATI NAG1 ANSHU KATARIA2 RAVI PRAKASH SINGH2 SOMA BANIK3 4 AFTAB ALAM1 K G SURESH1

      1. Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076, India
      2. Department of Physics, Indian Institute of Science Education and Research Bhopal, Bhopal 462066, India
      3. Electron Spectroscopy and Materials Laboratory, Synchrotrons Utilization Section, Raja Ramanna Centre for Advanced Technology, Indore 452 013, India
      4. Homi Bhabha National Institute, Mumbai 400094, India
    • Dates

       
  • Bulletin of Materials Science | News

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