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      https://www.ias.ac.in/article/fulltext/boms/044/0094

    • Keywords

       

      SiNWs; SEM; Raman; total reflectance; transmittance; absorption.

    • Abstract

       

      In order to improve photovoltaic efficiency, researches have been carried out on silicon nanowires (SiNWs). In this article, we report a comparative study between silicon substrate (Si) and SiNWs developed by a metal-assisted chemical etching (Ag) method at different etching times (25, 10 and 5 min). Scanning electron microscopy (SEM), transmission electron microscopy and X-ray diffraction were used to collect the morphological and structural informationon the SiNWs. Raman spectroscopy shows that the intensity of the nanowires is 4 to 10 times higher than that of the substrate, and increases with increase in etching time. The total reflectance of SiNWs reduced to less than 5% over theentire visible range. The low reflectance and zero transmittance of SiNWs lead to higher absorbance in the visible wavelength range. The SiNW-etched nanowire structure (25 min) works best for capturing light, we believe that having longer nanowires improves the optical working of the nanostructures and may be a potential candidate for high efficiency photovoltaic solar cells and other optic devices.

    • Author Affiliations

       

      AHLEM ROUIS1 NEILA HIZEM1 MOHAMED HASSEN2 CHOHDI AMRI3 ADEL KALBOUSSI1

      1. Laboratory of Microelectronics and Instrumentation (LR13ES12), Faculty of Science of Monastir, Avenue of Environment, University of Monastir, 5019 Monastir, Tunisia
      2. Higher Institute of Applied Sciences and Technology of Sousse, Taffala City (Ibn Khaldun), 4003 Sousse, Tunisia
      3. Faculty of Science of Bizerte, University of Carthage, 7021 Zarzouna, Tunisia
    • Dates

       
  • Bulletin of Materials Science | News

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    • Editorial Note on Continuous Article Publication

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