• Interpretation of trap-assisted conduction with estimation of electrical parameters of thin indigo film-based semiconducting device

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    • Keywords


      Natural organic dye; charge transport; series resistance; trap energy; ideality factor.

    • Abstract


      Trap-assisted charge conduction mechanism of indigo dye-based organic Schottky diode has been reported in present investigation. Signature of trapping probability has been encountered by G(I–V) vs. V characteristics. Nonmonotonous alignment of aforementioned characteristics emphasizes the existence of trapping states in its charge conduction process. Trap energy (E$_t$) has also been obtained for the device. Estimated value of E$_t$ is 0.073 eV which indicates improved outcome of 16.09 and 3.95%, when compared to other two previously reported organic dyes. Electrical parameters of the device have been estimated by analysing its $I–V$ relationship. Cheung–Cheung method has been used to calculate the series resistance (R$_s$), ideality factor ($n$) and barrier height ($\phi$) of the device. Obtained value of R$_s$, $n$ and $\phi$ are 0.127 k$\Omega$, 39.87 and 0.694 eV, respectively. Analysing the obtained data, Richardson–Schottky effect on charge transport mechanism has been interpreted in this context.

    • Author Affiliations



      1. Department of Physics, Jadavpur University, Kolkata 700032, India
      2. School of Energy Studies, Jadavpur University, Kolkata 700032, India
      3. Department of Mechanical Engineering, Jadavpur University, Kolkata 700032, India
    • Dates

  • Bulletin of Materials Science | News

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