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    • Keywords

       

      SiNWs hybrid solar cell; rGO-PEDOT:PSS; bandgap; CV curve; $J–V$ characteristics.

    • Abstract

       

      Silicon nanowire (SiNW) hybrid solar cell has been fabricated using PEDOT:PSS and rGO-PEDOT:PSS as the organic hole transport layer. The electrical characterization of the as-fabricated solar cell was done by both dark and photo $J–V$ characteristic curves. Vertically aligned arrays of SiNWs have been synthesized by following the electroless metal-assisted chemical etching method, as confirmed by both the scanning electron microscopy and atomic force microscopy images. The structural properties of SiNWs, PEDOT:PSS and rGO-PEDOT:PSS were characterized with thehelp of X-ray diffraction and Raman characterization techniques. The bandgap of PEDOT:PSS comes out to be 1.77 eV asobtained from the UV–visible and photoluminescence spectra. In addition, the bandgap of PEDOT:PSS was 1.76 eV and for reduced graphene oxide (rGO) it was 0.04 eV, as obtained from the cyclic voltammetry curve. rGO-PEDOT:PSS heterojunction showed excellent $J–V$ characteristic property in the dark and under the illumination of 1 sun. Hence the incorporation of rGO in PEDOT:PSS can improve the photovoltaic properties by increasing the conductivity of the hole transport layer, making a good interface between organic–inorganic heterojunction as well as by reducing the recombination of electron–hole pairs.

    • Author Affiliations

       

      RABINA BHUJEL1 SADHNA RAI1 UTPAL DEKA2 GAUTAM SARKAR3 JOYDEEP BISWAS4 BIBHU P SWAIN5

      1. Centre for Materials Science and Nanotechnology, Sikkim Manipal Institute of Technology, Sikkim Manipal University, Rangpo 737136, India
      2. Department of Physics, Sikkim Manipal Institute of Technology, Sikkim Manipal University, Rangpo 737136, India
      3. University Science Instrumentation Centre, University of North Bengal, Darjeeling 734013, India
      4. Department of Chemistry, Sikkim Manipal Institute of Technology, Sikkim Manipal University, Rangpo 737136, India
      5. Department of Physics, National Institute of Technology, Imphal 795004, India
    • Dates

       
  • Bulletin of Materials Science | News

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