• Thermal effects on resistive switching in manganite–silicon thin film device

• # Fulltext

https://www.ias.ac.in/article/fulltext/boms/044/0071

• # Keywords

Interface; resistive switching; manganite; thin film; device.

• # Abstract

In this article, we report the results of the fabrication and studies of Y$_{0.95}$Ca$_{0.05}$MnO$_3$/Si device (referred hereafter as YCMO/Si) by pulsed laser deposition (PLD) and its temperature-dependent resistive switching (RS) behaviours measured across the YCMO/Si interface. These temperature (100–300 K)-dependent hysteretic current–voltage ($I–V$) characteristics have been understood on the basis of various possible charge conduction mechanisms involving the thermal effects on the charge carriers during four different cycles of the RS behaviours. Variations in the values of barrierheight and the ratio of free to trapped charge carrier densities with temperature have been discussed for reverse bias mode of this YCMO/Si device. Temperature-dependent temperature coefficient of resistance (TCR) under different applied forward voltages shows an interesting variations in TCR with applied forward voltage, which proves this device as a potential candidate for practical applications.

• # Author Affiliations

1. Department of Physics, Saurashtra University, Rajkot 360 005, India
2. Department of Nanoscience and Advanced Materials, Saurashtra University, Rajkot 360 005, India
3. Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067, India

• # Bulletin of Materials Science

Volume 45, 2022
All articles
Continuous Article Publishing mode

• # Dr Shanti Swarup Bhatnagar for Science and Technology

Posted on October 12, 2020

Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020