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    • Keywords


      ZnO; doping; temperature; optical; spin-coating.

    • Abstract


      Spin-coating technique is employed to deposit nanostructured zinc oxide (ZnO) doping aluminium (Al) on p-Si substrate. Atomic forces microscopy (AFM), X-ray diffraction (XRD), ultraviolet–visible (UV–Vis) and scanning electron microscopies (SEM) are utilized to investigate the influence of annealing temperature in the range of 200 to 600$^{\circ}$C on the morphological, optical, structural and topographical characteristics of Al NPs-doped ZnO (AZO) nanostructure. The average reflectance is proven by the reflectance spectra to be in the wavelength range of 200–1000 nm, and the absorption spectra provided the optical energy gaps of nanostructured AZO. Crystalline and grain size are correlatedwith annealing temperature variations, thus providing more homogeneous and covered surface morphology. Our resultsare nominated for future researches.

    • Author Affiliations



      1. Institute of Nano Electronic Engineering, University Malaysia Perlis, 01000 Kangar, Perlis, Malaysia
      2. Nanotechnology and Catalysis Research Center (NANOCAT), University of Malaya, 50603 Kuala Lumpur, Malaysia
      3. Department of Mechatronics Engineering, Faculty of Engineering and Natural Sciences, Bahcesehir University, 34349 Besiktas, Istanbul, Turkey
      4. Laboratoire de Physique Quantique de la Matie`re et Mode´lisation Mathematique (LPQ3M), University of Mascara, 29000 Mascara, Algeria
      5. Laboratory for Developing New Materials and their Characterization, University of Setif 1, 19000 Setif, Algeria
      6. Laboratoire Physico-Chimie des Mate´riaux Avance´s (LPCMA), Universite´ Djilali Liabe`s de Sidi Bel-Abbe`s, Sidi Bel-Abbes 22000, Algerie
    • Dates

  • Bulletin of Materials Science | News

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      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

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