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      https://www.ias.ac.in/article/fulltext/boms/044/0025

    • Keywords

       

      PCBM; ZnO; dielectric constant; electric modulus; Al/PCBM:ZnO/$p$-Si structure.

    • Abstract

       

      The dielectric properties of the Al/PCBM:ZnO/$p$-Si structure were investigated using the impedance spectroscopy technique. PCBM:ZnO layer was obtained by spin coating method on the $p$-Si. The morphological properties ofthe PCBM:ZnO were investigated using atomic force microscopy. The results highlighted that PCBM:ZnO thin film has uniform surfaces. The dielectric parameters such as real and imaginary parts of the electric modulus (M$^{\prime}$ and M$^{\prime\prime}$) and ac electrical conductivity ($\sigma$), dielectric constant ($\epsilon^{\prime}$), dielectric loss ($\epsilon^{\prime\prime}$), loss tangent ($\tan \delta$) values were determined. Theresults of the dielectric properties of the Al/PCBM:ZnO/$p$-Si structures impressed voltage and frequency changing. The Al/PCBM:ZnO/$p$-Si structures can be regarded as a candidate for organic diode applications.

    • Author Affiliations

       

      DILBER ESRA YILDIZ1 ADEM KOCYIGIT2 MEHMET OKAN ERDAL3 MURAT YILDIRIM4

      1. Department of Physics, Hitit University, 19030 Corum, Turkey
      2. Engineering Faculty, Department of Electrical and Electronics Engineering, Igdir University, 76000 Igdir, Turkey
      3. Meram Vocational School, Necmettin Erbakan University, 42090 Konya, Turkey
      4. Faculty of Science, Department of Biotechnology, Selcuk University, 42130 Konya, Turkey
    • Dates

       
  • Bulletin of Materials Science | News

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    • Editorial Note on Continuous Article Publication

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