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      https://www.ias.ac.in/article/fulltext/boms/044/0019

    • Keywords

       

      Embedded Ge nanostructures; ion implantation; Raman spectroscopy; Rutherford backscattering spectrometry; cross-sectional transmission electron microscopy.

    • Abstract

       

      In this work, a system of embedded Ge nanoclusters (NCs) has been fabricated inside a thermally grown SiO$_x$ matrix via a low-energy ion-implantation technique. The low-energy ion-implantation technique gives the flexibility to choose the number of ions to be implanted and depth at which the ions to be placed below the SiO$_x$ surface. This can be achieved by choosing the proper fluence and energy. Thirty kilo electron volts Ge ions have been implanted into a SiO$_x$ matrix (thermally grown) on Si(100) substrate. Ge concentration has been varied by choosing three different fluences ($2.5\times 10^{15}$, $5 \times 10^{15}$ and $1 \times 10^{16}$ ions cm$^{-2}$). Further, ex situ annealing was carried at 800$^{\circ}$C under an inert atmosphere. Fluence-dependent distribution of Ge NCs post-annealing has been explained using Raman spectroscopy, photoluminescence spectroscopy (PL), Rutherford backscattering spectrometry (RBS) and cross-sectional transmission electron microscopy (XTEM) analysis.

    • Author Affiliations

       

      SUSHEEL KUMAR GUNDANNA1 PUSPENDU GUHA2 3 4 B SUNDARAVEL5 UMANANDA M BHATTA1

      1. Centre for Incubation, Innovation, Research and Consultancy, Jyothy Institute of Technology, Visvesvaraya Technological University, Bengaluru 560082, India
      2. Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005, India
      3. Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400085, India
      4. Present Address: RIAM, College of Engineering, Seoul National University, 1 Gwanak-Ro, Gwanak-Gu, Seoul 08826, Republic of Korea
      5. Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102, India
    • Dates

       
  • Bulletin of Materials Science | News

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