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      https://www.ias.ac.in/article/fulltext/boms/043/0278

    • Keywords

       

      InGaN; RF-MBE; Raman B$_1$ mode.

    • Abstract

       

      In$_x$Ga$_{1–x}$N ternary alloys are very promising for a variety of applications. However, high-quality growth of In$_x$Ga$_{1–x}$N alloys, particularly in the intermediate In composition range, is very difficult. This study reports on a systematic analysis of the Raman spectra from the In$_x$Ga$_{1–x}$N alloys grown by radio-frequency molecular beam epitaxy (RF-MBE)for the whole In compositional range, particularly in the intermediate range of In composition. The B$_1$ (high) mode, which is inherently Raman inactive is observed for the In$_x$Ga$_{1–x}$N alloys grown by RF-MBE. The behaviour of Raman inactive B$_1$ (high) mode is studied for the evaluation of In$_x$Ga$_{1–x}$N quality, which is found to vary with the In composition and thetemperature of growth. The crystallinity of the In$_x$Ga$_{1–x}$N alloys can be assessed using B$_1$ (high) mode’s relative signal intensity and full-width at half-maximum, which are well agreed with the reflection high energy electron diffraction and X-ray diffraction analyses. The optimum growth temperature for the In$_x$Ga$_{1–x}$N alloys grown by RF-MBE in the intermediate range of In composition is also discussed.

    • Author Affiliations

       

      ASHRAFUL G BHUIYAN1 KENJI KURODA2 MD SHERAJUL ISLAM1 AKIHIRO HASHIMOTO2

      1. Department of Electrical and Electronic Engineering, Khulna University of Engineering and Technology (KUET), Khulna 9203, Bangladesh
      2. Graduate School of Electrical and Electronics Engineering, University of Fukui, Fukui 910-8507, Japan
    • Dates

       
  • Bulletin of Materials Science | News

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