• Effect of CuIn$_{1-x}$Al$_x$Se$_2$ (CIAS) thin film thickness and diode annealing temperature on Al/p-CIAS Schottky diode

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    • Keywords

       

      Thin film Schottky diode; current–voltage ($I–V$) measurement; capacitance–voltage ($C–V$) measurement; energy band diagram.

    • Abstract

       

      Al/p-CIAS Schottky diodes were fabricated by depositing aluminium (Al) on different flash evaporated copper–indium–aluminium–diselenide (CIAS) films of varying thickness. Further, all diodes were annealed at 573 K for an hour. The influence of p-CIAS film thickness and the thermal annealing of Al/p-CIAS Schottky diode were investigated by observing current–voltage ($I–V$) and capacitance–voltage ($C–V$) characteristics at room temperature. Various diodeparameters, such as ideality factor ($\eta$), barrier height ($\phi_{\rm bo}$) and series resistance ($R_{\rm s}$) were calculated using Cheung’s and Norde methods. $\phi_{\rm bo}$ found to increase with annealing as well as with increase in the film thickness. However, the value of $\eta$ and $R_{\rm s}$ decreases with annealing and CIAS thickness. The effective density of states ($N_{\rm v}$), acceptor density of states ($N_{\rm A}$) and barrier height have been calculated from $C–V$ measurements. Values obtained from CV analysis were well matched with $I–V$ results. The value of $N_{\rm v}$ decreases and the value of $N_{\rm A}$ increases with the increase in the film thickness. Using $I–V$ and $C–V$ parameters, energy band gap for the prepared Al/p-CIAS diodes has been reconstructed.

    • Author Affiliations

       

      USHA PARIHAR1 JAYMIN RAY2 C J PANCHAL3 NARESH PADHA1

      1. Department of Physics and Electronics, University of Jammu, Jammu 180006, India
      2. Department of Physics, Uka Tarsadia University, Bardoli 394601, India
      3. Applied Physics Department, MS University of Baroda, Vadodara 390001, India
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