Enhancement of optical properties of boron-doped SiC thin film: a SiC QD effect
KUSUMITA KUNDU JOY CHAKRABORTY SURESH KUMAR N ESHWARA PRASAD RAJAT BANERJEE
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Silicon carbide quantum dots (SiC-QD) embedded inside the SiC thin film deposited on silicon (111) wafer is directly synthesized by modified chemical vapour deposition technique using boron-doped liquid polycarbosilane as aprecursor. Subsequent microscopic characterization of the thin film exhibits the presence of QD, which is theoretically corroborated from the exciton Bohr radius. The film shows interesting visible and near-infra-red photoluminescence atroom temperature with enhanced lifetime. In addition to the lifetime, the quantum efficiency in the visible emission was also enhanced substantially than what was reported previously.
KUSUMITA KUNDU1 2 JOY CHAKRABORTY3 SURESH KUMAR3 N ESHWARA PRASAD3 RAJAT BANERJEE1 2
Volume 44, 2021
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Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020
Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
Physical Sciences 2020
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