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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/043/0250

    • Keywords

       

      3C-silicon carbide; thin film; SiC nanocrystals; quantum confinement effect.

    • Abstract

       

      Silicon carbide quantum dots (SiC-QD) embedded inside the SiC thin film deposited on silicon (111) wafer is directly synthesized by modified chemical vapour deposition technique using boron-doped liquid polycarbosilane as aprecursor. Subsequent microscopic characterization of the thin film exhibits the presence of QD, which is theoretically corroborated from the exciton Bohr radius. The film shows interesting visible and near-infra-red photoluminescence atroom temperature with enhanced lifetime. In addition to the lifetime, the quantum efficiency in the visible emission was also enhanced substantially than what was reported previously.

    • Author Affiliations

       

      KUSUMITA KUNDU1 2 JOY CHAKRABORTY3 SURESH KUMAR3 N ESHWARA PRASAD3 RAJAT BANERJEE1 2

      1. CSIR - Central Glass and Ceramic Research Institute, Jadavpur, Kolkata 700032, India
      2. Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
      3. Defence Materials and Stores Research and Development Establishment, Kanpur 208013, India

    • Dates

       
      Published
      2 September 2020
      Manuscript received
      15 November 2019
      Accepted
      31 March 2020
      Final version published online
      2 September 2020

  • Bulletin of Materials Science | News

    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

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