• Fulltext

       

        Click here to view fulltext PDF


      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/042/06/0277

    • Keywords

       

      Tin oxide; nanoparticles; passivation; surface-barrier; detector.

    • Abstract

       

      A new technique to passivate silicon surfaces using SnO$_2$ films, produced by decomposing organic films of the octadecylamine–stannate complex, deposited by the Langmuir–Blodgett (L–B) technique, has been attempted to fabricate silicon surface barrier detectors. This method of passivation is relatively simpler and can be carried out at a much lower temperature as compared to the usual passivation method of the silicon surface by growing the SiO$_2$ layer on it. Also, the passivating layer of SnO$_2$ produced in this new method has a good shelf-life. The detectors fabricated with a passivating layer of SnO$_2$ were subsequently tested for $I $–$V$, alpha spectrum and long-term performance.

    • Author Affiliations

       

      A RAY1 2 SIPRA CHOUDHURY3 VISHAL SINGH4 C A BETTY2 3 T V CHANDRASEKHAR RAO1 2

      1. Technical Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400 085, India
      2. Homi Bhabha National Institute, Anushakti Nagar, Mumbai 400 094, India
      3. Chemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400 085, India
      4. Material Science Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400 085, India
    • Dates

       
  • Bulletin of Materials Science | News

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2017-2019 Indian Academy of Sciences, Bengaluru.