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Effect of nitrogen flow rate on the mechanical properties of CVD-deposited SiCN thin films
DHRUVA KUMAR RANJAN Kr GHADAI SOHAM DAS ASHIS SHARMA BIBHU P SWAIN
Volume 42 Issue 5 October 2019 Article ID 0251
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Keywords
SiCN ;Raman ;XRD ;FTIR ;nanoindentation. -
Abstract
Silicon carbonitride (SiCN) thin films were deposited on p-Si (100) substrates with different N₂ flow rates using SiC and Si₃N₄ powder precursors by chemical vapour deposition. To investigate the structural, vibrational and mechanical properties, the SiCN thin films were characterized by atomic force microscopy, Raman spectroscopy, X-ray diffraction (XRD), Fourier transform infrared and nanoindentation techniques. The XRD results reveal nanocrystals embedded with amorphous networks in the SiCN thin films. An increase in the $I$_{D}/$I$_{G} ratio with an increase in the N₂ flow rate indicated the increase of sp³ bonds in the SiCN thin film. The hardness ($H$), Young’s modulus ($E$), plasticity index ($H/E$) and ($H$³/$E$²) increase with an increase in the N₂ flow rate.
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Author Affiliations
DHRUVA KUMAR1 RANJAN Kr GHADAI1 SOHAM DAS1 ASHIS SHARMA1 BIBHU P SWAIN2
- Department of Mechanical Engineering, Sikkim Manipal Institute of Technology, Sikkim Manipal University, Gangtok 737136, India
- Department of Physics, National Institute of Technology Manipur, Langol 795004, India
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Dates
- Published
- October 2019
- Manuscript received
- 6 February 2019
- Accepted
- 1 June 2019
- Final version published online
- 28 June 2019
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