• Power-dependent physical properties of GaN thin ﬁlms deposited on sapphire substrates by RF magnetron sputtering

• # Fulltext

https://www.ias.ac.in/article/fulltext/boms/042/05/0196

• # Keywords

GaN; III-nitride; radio frequency; sapphire; RF magnetron sputtering.

• # Abstract

Gallium nitride (GaN) thin ﬁlms were grown on the Al₂O₃ (0001) substrate using radio frequency (RF) magnetron sputtering under various RF powers. Many experimental techniques were used for investigating the effects of RF power on the GaN thin ﬁlm growth and its physical properties. The X-ray diffraction results conﬁrmed that the GaN thin ﬁlm had a polycrystalline structure with planes of (101) and (202). The structural parameters of the thin ﬁlm changed with RF powers. It was also found that the optical band gap energy of GaN thin ﬁlms varied with changing RF power. From the atomic force microscopy images, almost homogeneous, nanostructured and a low-rough surface of the GaN thin ﬁlm can be observed. From scanning electron microscopy analysis, dislocations and agglomerations were observed in some regions of the surface of the GaN thin ﬁlm. $E_{₂}$ (high) optical phonon mode of GaN was observed, proving the hexagonal structure of the thin ﬁlm. The residual stress in the GaN thin ﬁlms was calculated from Raman measurements. Furthermore, an agreement between the experimental measurements was also examined. The morphological, structural and optical properties of the GaN thin ﬁlm could be improved with altering RF power. These ﬁlms could be used in devices such as light emitting diodes, solar cells and diode applications.

• # Author Affiliations

1. Department of Physics, Faculty of Art and Science, Mus¸ Alparslan University, Mu¸s 49250, Turkey
2. Department of Physics, Faculty of Science, Atatürk University, Erzurum 25250, Turkey

• # Bulletin of Materials Science

Current Issue
Volume 42 | Issue 6
December 2019

• # Editorial Note on Continuous Article Publication

Posted on July 25, 2019