• Investigation of electrical properties of In/ZnIn$_2$Te$_4$/n-Si/Ag diode

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    • Keywords


      Thin film; thermal evaporation; thermionic emission

    • Abstract


      In/ZnIn$_2$Te$_4$/n-Si/Ag diode structure was fabricated by the thermal deposition of a ZnIn$_2$Te$_4$ thin film on n-Si wafer substrate with Ag metal back contact. The structural characteristics of the film were investigated in terms ofcomposition, X-ray diffraction and topographic measurements. The diode structure was completed by evaporating In metal on the film surface as a top contact. The diode parameters as saturation current, barrier height, ideality factor and seriesresistance values were determined from the semi-logarithmic forward bias current–voltage characteristics of the diode. According to the assumption of the thermionic emission model, the ideality factor was found higher than unity and it wasalso observed that the barrier height and ideality factor showed a temperature-dependent profile resulting from the nonideality in the current–voltage behaviour of the diode. As a result, the model was modified by considering inhomogeneousbarrier formation and Gaussian distribution was expected to be dominant on 1.37 eV mean barrier height with a deviation of 0.18. In addition, the voltage dependence of these Gaussian diode parameters was investigated. The forward and reverse bias capacitance and conductance measurements showed that there was a slight change in capacitance values with frequency whereas the conductance values decreased with increase in frequency. In addition to the current–voltage analysis, the distribution of density of interface states and the values of series resistance were evaluated as a function of bias voltage andfrequency.

    • Author Affiliations


      H H GÜLLÜ1

      1. Department of Electrical and Electronics Engineering, Atilim University, Ankara 06830, Turkey
    • Dates

  • Bulletin of Materials Science | News

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