• Effect of strain on GaAs$_{1−x−y}$N$_x$Bi$_y$/GaAs to extract the electronic band structure and optical gain by using 16-band $kp$ Hamiltonian

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    • Keywords


      GaAs$_{1−x−y}$N$_x$Bi$_y$; $kp$ method; strain; optical gain.

    • Abstract


      GaAs$_{1−x−y}$N$_{x}$Bi$_y$ is a suitable candidate for 1.06 $\mu$m solid state lasers and high-efficiency solar cells. Mathematical models such as 16-band kp model is used to study the band structure, strain generated effect, band offset and variation of their parameters with Bi and N concentrations. Lattice constants of alloy GaAs$_{1−x−y}$N$_{x}$Bi$_y$ with $x/y = 0.58$ can match those of GaAs with the incorporation of Bi and N into GaAsNBi. Arsenic atom substitution due to the incorporation of N and Bi impurity atoms causes a significant band gap reduction of $\sim$200 meV for GaAs$_{0.937}$N$_{0.023}$Bi${{0.04}$ alloys under lattice-matched conditions and in addition, by tuning the concentrations of N and Bi, the electrical and optical properties of GaAsNBi can be controlled. Optical gain of GaAs$_{1−x−y}$N$_x$Bi$_y$ quantum well (QW) and GaAs as a barrier are calculated in generalized mode and observed the effect of the energy level of GaAs barrier on the GaAsNBi QW.

    • Author Affiliations



      1. Department of Basic & Applied Science, National Institute of Technology, Papum Pare 791112, Arunachal Pradesh, India
    • Dates

  • Bulletin of Materials Science | News

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