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    • Keywords

       

      Crystal growth; tin selenide; secondary structure phase.

    • Abstract

       

      The tin selenide crystals with different proportions of Sn and Se were grown by a direct vapour-transport technique. The layer by layer growth of crystals from the vapour phase was promoted by screw dislocation mechanism. The powder X-ray diffraction (XRD) shows good crystallinity of grown compound. The XRD patterns of grown compounds are well-indexed to orthorhombic structure. In the off-stoichiometric compound, evidence of SnSe$_2$ secondary phase is observed due to excess of selenium. The morphological investigations were carried out using a Carl Zeiss optical microscope. The electron diffraction was also recorded from tiny flakes using a transmission electron microscope. The electrical resistivity both parallel and perpendicular to the c-axis was measured in the temperature range of 303–490 K and activation energy was also calculated using Arrhenius relation. The electrical study depicts the extrinsic semiconducting nature of grown compositions.

    • Author Affiliations

       

      MOHIT TANNARANA1 G K SOLANKI1 K D PATEL1 V M PATHAK1 PRATIK PATANIYA1

      1. Department of Physics, Sardar Patel University, Anand 388120, Gujarat, India
    • Dates

       
  • Bulletin of Materials Science | News

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      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
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      Posted on July 25, 2019

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