The tin selenide crystals with different proportions of Sn and Se were grown by a direct vapour-transport technique. The layer by layer growth of crystals from the vapour phase was promoted by screw dislocation mechanism. The powder X-ray diffraction (XRD) shows good crystallinity of grown compound. The XRD patterns of grown compounds are well-indexed to orthorhombic structure. In the off-stoichiometric compound, evidence of SnSe$_2$ secondary phase is observed due to excess of selenium. The morphological investigations were carried out using a Carl Zeiss optical microscope. The electron diffraction was also recorded from tiny flakes using a transmission electron microscope. The electrical resistivity both parallel and perpendicular to the c-axis was measured in the temperature range of 303–490 K and activation energy was also calculated using Arrhenius relation. The electrical study depicts the extrinsic semiconducting nature of grown compositions.
Volume 45, 2022
Continuous Article Publishing mode
Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020
Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
Physical Sciences 2020
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