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    • Keywords


      SrTiO$_3$; Bi doping; resistance-switching properties; device structure; sol–gel.

    • Abstract


      SrTiO$_3$ and Bi-doped SrTiO$_3$ films were fabricated with different device structures using the sol–gel method for non-volatile memory applications, and their resistance-switching behaviour, endurance and retention characteristics were investigated. SrTiO$_3$ and Sr$_{0.92}$Bi$_{0.08}$TiO$_3$ films grown on Si or Pt have the same phase structure, morphologies and grain size; however, the grain size of the Sr$_{0.92}$Bi$_{0.08}$TiO$_3$ films grown on Si is slightly larger than those of the SrTiO$_3$ films grown on Si and the Sr$_{0.92}$Bi$_{0.08}$TiO$_3$ films grown on Pt. The SrTiO$_3$ or Sr$_{0.92}$Bi$_{0.08}$TiO$_3$ films grown on Si or Pt all exhibitbipolar resistive-switching behaviour and follow the same conductive mechanism; however, the Ag/Sr$_{0.92}$Bi$_{0.08}$TiO$_3$/Si device possesses the highest $R_{\rm HRS}/R_{\rm LRS}$ of 10$^5$ and the best endurance and retention characteristics. The doping of Bi is conducive to enhance the $R_{\rm HRS}/R_{\rm LRS}$ of the SrTiO$_3$ films; meanwhile, the Si substrates help improve the endurance and retention characteristics of the Sr$_{0.92}$Bi$_{0.08}$TiO$_3$ films.

    • Author Affiliations



      1. School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, People’s Republic of China
    • Dates

  • Bulletin of Materials Science | News

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