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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/041/06/0149

    • Keywords

       

      SrTiO$_3$; Bi doping; resistance-switching properties; device structure; sol–gel.

    • Abstract

       

      SrTiO$_3$ and Bi-doped SrTiO$_3$ films were fabricated with different device structures using the sol–gel method for non-volatile memory applications, and their resistance-switching behaviour, endurance and retention characteristics were investigated. SrTiO$_3$ and Sr$_{0.92}$Bi$_{0.08}$TiO$_3$ films grown on Si or Pt have the same phase structure, morphologies and grain size; however, the grain size of the Sr$_{0.92}$Bi$_{0.08}$TiO$_3$ films grown on Si is slightly larger than those of the SrTiO$_3$ films grown on Si and the Sr$_{0.92}$Bi$_{0.08}$TiO$_3$ films grown on Pt. The SrTiO$_3$ or Sr$_{0.92}$Bi$_{0.08}$TiO$_3$ films grown on Si or Pt all exhibitbipolar resistive-switching behaviour and follow the same conductive mechanism; however, the Ag/Sr$_{0.92}$Bi$_{0.08}$TiO$_3$/Si device possesses the highest $R_{\rm HRS}/R_{\rm LRS}$ of 10$^5$ and the best endurance and retention characteristics. The doping of Bi is conducive to enhance the $R_{\rm HRS}/R_{\rm LRS}$ of the SrTiO$_3$ films; meanwhile, the Si substrates help improve the endurance and retention characteristics of the Sr$_{0.92}$Bi$_{0.08}$TiO$_3$ films.

    • Author Affiliations

       

      HUA WANG1 WENBO ZHANG1 JIWEN XU1 GUOBAO LIU1 HANG XIE1 LING YANG1

      1. School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, People’s Republic of China
    • Dates

       
  • Bulletin of Materials Science | News

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