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      https://www.ias.ac.in/article/fulltext/boms/041/03/0070

    • Keywords

       

      Resistive switching; heterostructure; SrTi$_{0.92}$Mg$_{0.08}$O$_3$; Sr$_{0.88}$Bi$_{0.12}$TiO$_3$; sol–gel.

    • Abstract

       

      The Sr$_{0.88}$Bi$_{0.12}TiO$_3$/SrTi$_{0.92}$Mg$_{0.08}$O$_3$ (SBTO/STMO) heterostructure films were prepared on p$^+$-Si substratesby sol–gel spin-coating technique, and the films had good crystallinity and uniform grain distribution. The heterostructure films with a structure of Ag/SBTO/STMO/p$^+$-Si exhibited a bipolar, remarkable resistance-switching characteristic, and $R_{\rm HRS}/R_{\rm LRS} \sim 10^4$. More importantly, the heterostructure films showed rectifying characteristic in the low resistance state (LRS), and the rectification ratio can reach 10$^2$ at $\pm$1 V. The dominant resistive-switching conduction mechanism of high resistance state (HRS) was Ohmic behaviour, and the LRS changed to space charge-limited current(SCLC).

    • Author Affiliations

       

      WENBO ZHANG1 HUA WANG1 JIWEN XU1 GUOBAO LIU1 HANG XIE1 LING YANG1

      1. School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, People’s Republic of China
    • Dates

       
  • Bulletin of Materials Science | News

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