• Fulltext

       

        Click here to view fulltext PDF


      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/041/01/0023

    • Keywords

       

      Superconductivity; single crystal; molecular beam epitaxy; buffer layer.

    • Abstract

       

      Thin films of optimally doped(001)-oriented YBa$_2$Cu$_3$O$_{7−\delta}$ are epitaxially integrated on silicon(001) through growth on a single crystalline SrTiO$_3$ buffer. The former is grown using pulsed-laser deposition and the latter is grown on Si using oxide molecular beam epitaxy. The single crystal nature of the SrTiO$_3$ buffer enables high quality YBa$_2$Cu$_3$O$_{7−\delta}$ films exhibiting high transition temperatures to be integrated on Si. For a 30-nm thick SrTiO$_3$ buffer, 50-nm thick YBa$_2$Cu$_3$O$_{7−\delta}$ films that exhibit a transition temperature of $\sim$93 K, and a narrow transition width (<5 K) are achieved. The integration ofsingle crystalline YBa$_2$Cu$_3$O$_{7−\delta}$ on Si(001) paves the way for the potential exploration of cuprate materials in a variety of applications.

    • Author Affiliations

       

      K AHMADI-MAJLAN1 H ZHANG2 X SHEN3 4 M J MOGHADAM1 M CHRYSLER1 P CONLIN1 R HENSLEY1 D SU3 J Y T WEI2 J H NGAI1

      1. Department of Physics, University of Texas at Arlington, Arlington, TX 76019, USA
      2. Department of Physics, University of Toronto, Toronto, ON M5S 1A7, Canada
      3. Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY 11973, USA
      4. National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People’s Republic of China
    • Dates

       
  • Bulletin of Materials Science | News

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2017-2019 Indian Academy of Sciences, Bengaluru.