• Effect of annealing atmosphere on microstructure, optical and electronic properties of spray-pyrolysed In-doped Zn(O,S) thin films

• # Fulltext

https://www.ias.ac.in/article/fulltext/boms/041/01/0022

• # Keywords

Buffer layer; window layer; thin film solar cell; doping; electrical properties.

• # Abstract

Spray-pyrolysed zinc oxy-sulphide Zn(O,S) has been doped with varying concentrations of indium (In) toimprove its electrical and optical properties for possible application as buffer layer in thin film solar cells. The In-dopingin Zn(O,S) is found to change the electron carrier concentration from 10$^{19}$ to 10$^{18}$ cm$^{−3}$ and a subsequent annealing in argon atmosphere is found to improve its electrical conductivity. Moreover, annealing in air atmosphere reduces the carrier concentration to a range of 10$^{13}$–10$^{15}$ cm$^{−3}$ making it useful as a buffer layer. The reduction in degeneracy of In-doped Zn(O,S) is desirable for its application as buffer material, whereas annealing in argon makes it suitable as electron membrane (window layer) in thin film solar cell.

• # Author Affiliations

1. Solar Research and Development Center, School of Solar Energy, Pandit Deendayal Petroleum University, Gandhinagar 382007, India

• # Bulletin of Materials Science

Volume 43, 2020
All articles
Continuous Article Publishing mode

• # Editorial Note on Continuous Article Publication

Posted on July 25, 2019