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      https://www.ias.ac.in/article/fulltext/boms/041/01/0022

    • Keywords

       

      Buffer layer; window layer; thin film solar cell; doping; electrical properties.

    • Abstract

       

      Spray-pyrolysed zinc oxy-sulphide Zn(O,S) has been doped with varying concentrations of indium (In) toimprove its electrical and optical properties for possible application as buffer layer in thin film solar cells. The In-dopingin Zn(O,S) is found to change the electron carrier concentration from 10$^{19}$ to 10$^{18}$ cm$^{−3}$ and a subsequent annealing in argon atmosphere is found to improve its electrical conductivity. Moreover, annealing in air atmosphere reduces the carrier concentration to a range of 10$^{13}$–10$^{15}$ cm$^{−3}$ making it useful as a buffer layer. The reduction in degeneracy of In-doped Zn(O,S) is desirable for its application as buffer material, whereas annealing in argon makes it suitable as electron membrane (window layer) in thin film solar cell.

    • Author Affiliations

       

      MARGI JANI1 DHYEY RAVAL1 RANJAN KUMAR PATI1 INDRAJIT MUKHOPADHYAY1 ABHIJIT RAY1

      1. Solar Research and Development Center, School of Solar Energy, Pandit Deendayal Petroleum University, Gandhinagar 382007, India
    • Dates

       
  • Bulletin of Materials Science | News

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