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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/040/07/1355-1359

    • Keywords

       

      AFM; MBE; photoluminescence; XRD; quantum well; GaMnAs.

    • Abstract

       

      We report on the structural and optical properties of Ga$_{1−x}$Mn$_x$As–AlAs quantum wells (QWs) with $x = 0.1$% grown by molecular beam epitaxy (MBE) on semi-insulating GaAs substrates with orientations (100), (110), (311)B and(411)B. Atomic force microscopy (AFM), X-ray diffraction (XRD) and photoluminescence (PL) techniques were used toinvestigate these QWs. AFM results have evidenced the formation of Mn-induced islands, which are randomly distributedon the surface. These islands tend to segregate for samples grown on (110) and (411)B planes, while no clear segregationwas observed for samples grown on (100) and (311)B orientations. Results show that the PL line width increases with Mnsegregation. XRD measurements were used to determine 2$\theta$, $d$ and cell parameters.

    • Author Affiliations

       

      MUSTAFA GUNES1 CEBRAIL GUMUS2 YARA GALVÃO GOBATO3 MOHAMED HENINI4

      1. Department of Materials Engineering, Engineering and Natural Sciences Faculty, Adana Science and Technology University, 01250 Adana, Turkey
      2. Physics Department, Cukurova University, 01330 Adana, Turkey
      3. Departamento de Física, Universidade Federal de São Carlos, São Carlos, SP 13560-905, Brazil
      4. School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Center, University of Nottingham, Nottingham NG7 2RD, UK
    • Dates

       
  • Bulletin of Materials Science | News

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