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Bipolar resistive switching behaviour in Mn$_{0.03}$Zn$_{0.97}$O/amorphous La$_{0.7}$Zn$_{0.3}$MnO$_3$ heterostructure films
HUA WANG QISONG CHEN JIWEN XU XIAOWEN ZHANG SHUAISHUAI YAN
Volume 40 Issue 6 October 2017 pp 1285-1289
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https://www.ias.ac.in/article/fulltext/boms/040/06/1285-1289 -
Keywords
Mn$_{0.03}$Zn$_{0.97}$O ;amorphous La$_{0.7}$Zn$_{0.3}$MnO$_3$ ;heterostructures ;resistive switching ;sol–gel. -
Abstract
Mn$_{0.03}$Zn$_{0.97}$O (MZO)/amorphous La$_{0.7}Zn$_{0.3}$MnO$_3$ (LZMO) heterostructures were deposited on p$^+$-Si substratesthrough sol–gel spin coating. Ag/MZO/LZMO/p$^+$-Si and Ag/LZMO/MZO/p$^+$-Si devices exhibit a bipolar, reversibleand remarkable resistive switching behaviour at room temperature. The ratio of the resistance at high-resistance state (HRS)to that at low-resistance state (LRS) ($R_{\rm HRS}/R_{\rm LRS}$) in the Ag/LZMO/MZO/p$^+$-Si device is approximately five orders of magnitude, and is maintained after over 10$^3$ successive switching cycles or over a period of $2\times 10^6$ s, indicating good endurance property and retention characteristics. Conversely, the ratio in the Ag/MZO/LZMO/p$^+$-Si device began to decrease after 100 successive switching cycles. The LZMO/MZO interface could play an important role in the resistive switching behaviour of the devices. The dominant conduction mechanism of the two devices is charge-trap emission.
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Author Affiliations
HUA WANG1 QISONG CHEN1 JIWEN XU1 XIAOWEN ZHANG1 SHUAISHUAI YAN1
- School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin, China
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Dates
- Published
- 15 October 2017
- Manuscript received
- 14 October 2016
- Accepted
- 30 January 2017
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