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    • Investigation of capacitance characteristics in metal/high-$k$ semiconductor devices at different parameters and with and without interface state density (traps)

      S HLALI N HIZEM A KALBOUSSI

      Volume 40 Issue 5 September 2017 pp 1035-1041

    • Fulltext

       

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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/040/05/1035-1041

    • Keywords

       

      $C−V$ characteristic; high-k dielectric; interface state density; MIS structure; nanotechnology; TCAD simulation.

    • Abstract

       

      Capacitance vs. voltage ($C−V$) curves at AC high frequency of a metal–insulator–semiconductor (MIS) capacitorare investigated in this paper. Bi-dimensional simulations with Silvaco TCAD were carried out to study the effect ofoxide thickness, the surface of the structure, frequency, temperature and fixed charge in the oxide on the $C−V$ curves. We evaluate also the analysis of MIS capacitor structures by different substrate doping concentrations with and without interfacestate density at different temperatures (100, 300 and 600 K). These studies indicate that the doping substrate concentrationand the traps enormously affect the high-frequency $C−V$ curve behaviour. We also demonstrate that for low and hightemperatures, the high-frequency $C−V$ curves behaviour changes, indicating that the capacitance due to the substrate issignificantly influenced in these conditions (bias and substrate doping concentration).

    • Author Affiliations

       

      S HLALI1 N HIZEM1 A KALBOUSSI1

      1. Laboratoire de Microélectronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir, Université de Monastir, Avenue de l’environnement, 5019 Monastir, Tunisia

    • Dates

       
      Published
      15 September 2017
      Manuscript received
      4 May 2016
      Accepted
      10 January 2017

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