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      https://www.ias.ac.in/article/fulltext/boms/040/01/0239-0245

    • Keywords

       

      Graphene; SERS; GFET; humidity.

    • Abstract

       

      Recently, unknown-manner changes in charge neutrality point (CNP) positioning were ascribed to humidity at graphene field effect transistors (GFETs). While the exactmeans of humidity interacting with hydrophobicgraphene remains unknown, this work examines pristine and lithographic-process-applied graphene surfaces with surface enhanced Raman spectra (SERS). SERS analysis shows that the lithographic-process-applied graphenedoes not have the same properties as those of pristine graphene. Furthermore, this study has experimentally investigated the effect of humidity on the transfer characteristics of GFET and proposed a model to explain the formationof asymmetric $I_{\rm DS}–V_{\rm bg}$ branches in accordance with the SERS results and humidity responses.

    • Author Affiliations

       

      BEHIYE BOYARBAY KANTAR1 MUH˙ITT˙IN ÖZTÜRK2 H˙IDAYET ÇET˙IN3

      1. Department of Physics, Science Faculty, Erciyes University, Kayseri 38039, Turkey
      2. Department of Physics, Ni˘gde University, Graduate School Natural and Applied Sciences, Ni˘gde 51240, Turkey
      3. Department of Physics, Art and Science Faculty, Bozok University, Yozgat 66900, Turkey
    • Dates

       
  • Bulletin of Materials Science | News

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