• Electrical characteristics of metal–insulator–semiconductor and metal–insulator–semiconductor–insulator–metal capacitors under different high-$k$ gate dielectrics investigated in the semi-classical and quantum mechanical models

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      https://www.ias.ac.in/article/fulltext/boms/040/01/0067-0078

    • Keywords

       

      Nanotechnology; MIS device; MISIM device; quantum-mechanicalmodel; semi-classicalmodel; metal gate.

    • Abstract

       

      In this paper the electrical characteristics of metal–insulator–semiconductor (MIS) and metal–insulator–semiconductor–insulator–metal (MISIM) capacitors with (100)-oriented p-type silicon as a substrate under different high-$k$ gate dielectrics (SiO$_2$, HfO$_2$, La$_2$O$_3$ and TiO$_2$) are investigated in the semi-classical and quantum mechanical models. We review the quantum correction in the inversion layer charge density for p-doped structures. The purpose of this paper is to point out the differences between the semi-classical and quantum mechanical charge descriptions at the insulator–semiconductor interface and the effect of the type of oxide and their position (gate oxide or buried oxide) in our structures. In particular, capacitance–voltage ($C–V$), relative position of the sub-band energies and their wavefunctions are studied to examine qualitatively and quantitatively the electron states and charging mechanisms in our devices. We find that parameters such as threshold voltage and device trans-conductance are enormously sensitive to the proper treatment of quantization effects.

    • Author Affiliations

       

      SLAH HLALI1 NEILA HIZEM1 ADEL KALBOUSSI1

      1. Laboratoire de Microélectronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir, Avenue de l’environnement, Université de Monastir, 5019 Monastir, Tunisie
    • Dates

       
  • Bulletin of Materials Science | News

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