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https://www.ias.ac.in/article/fulltext/boms/039/07/1665-1670

La$_{1−x}$Zn$_x$MnO$_3$; amorphous; resistance switching; sol–gel.

Ag/La$_{1−x}$Zn$_x$MnO$_3$/p$^+$-Si devices with different Zn doping contents were fabricated through sol–gel method. The effects of Zn doping concentration on the microstructure of La$_{1−x}$Zn$_x$MnO$_3$ films, as well as on the resistance switching behaviour and endurance characteristics of Ag/La$_{1−x}$Zn$_x$MnO$_3$/p$^{+}$-Si were investigated. After annealing at 600$^{\circ}$C for 1~h, the La$_{1−x}$Zn$_x$MnO$_3$ ($x = 0.1$, 0.2, 0.3, 0.4, 0.5) are amorphous and have bipolar resistance characteristics, with RHRS/RLRS ratios $>$103. However, the endurance characteristics show considerable differences; $x = 0.3$ shows the best endurance characteristics in more than 1000 switching cycles. The conduction mechanism of the Ag/La$_{1−x}$Zn$_x$MnO$_3$/p$^{+}$-Si is the Schottky emission mode at high resistance state. However, the conduction mechanism at low resistance state varies with Zn doping concentration. The dominant mechanism at $x = 0.1$ is filamentary conduction mechanism, whereas that at $x \ge 0.2$ is space-charge-limited current conduction.

SHUAISHUAI YAN^{1 2} HUA WANG^{1 2} JIWEN XU^{1 2} LING YANG^{1 2} WEI QIU^{1 2} QISONG CHEN^{1 2} DONG HAN^{1 2}

1. School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, People’s Republic of China
2. Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, People’s Republic of China

Published

15 December 2016

Manuscript received

19 May 2015

Accepted

6 May 2016