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    • Fulltext

       

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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/039/06/1441-1451

    • Keywords

       

      Device simulation; graphene; h-BN; NEGF; RTD.

    • Abstract

       

      In this article a double-barrier resonant tunnelling diode (DBRTD) has been modelled by taking advantage of single-layer hexagonal lattice of graphene and hexagonal boron nitride (h-BN). The DBRTD performance and operation are explored by means of a self-consistent solution inside the non-equilibrium Green’s function formalism on an effective mass-Hamiltonian. Both p- and n-type DBRTDs exhibit a negative differential resistance effect, which entails the resonant tunnelling through the hole and electron bound states in the graphene quantum well, respectively. The peak-to-valley ratio of approximately 8 (3) for p-type (n-type) DBRTD with quantum well of 5.1 nm (4.3 nm) at a barrier width of 1.3 nm was achieved for zero bandgap graphene at room temperature.

    • Author Affiliations

       

      PENCHALAIAH PALLA1 GOPI RAJA UPPU1 ANITA S ETHIRAJ1 J P RAINA1

      1. Center for Nanotechnology Research, VIT University, Vellore 632014, India

    • Dates

       
      Published
      15 October 2016
      Manuscript received
      15 September 2015
      Accepted
      21 March 2016

  • Bulletin of Materials Science | News

    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

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