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    • Keywords


      Spin–orbit interaction; barrier transparency; polarization efficiency; tunnelling lifetime.

    • Abstract


      The effect of ‘Al’ concentration on spin-dependent tunnelling in strained non-magnetic symmetric double-barrier semiconductor has been theoretically investigated. The separation between spin-up and spin-down components, barrier transparency, polarization efficiency and tunnelling lifetime were calculated using the transfer matrix approach. The separation between spin-up and spin-down resonances and tunnelling lifetime were reportedfor the first time in the case of InAs/Ga$_{1−y}$Al$_y$As heterostructures for various ‘Al’ concentrations and for various barrier widths. Cent percentage polarization can be obtained in this strained non-magnetic double-barriersemiconductor even without any external field.

    • Author Affiliations



      1. Department of Physics, The American College, Madurai 625002, India
      2. Department of Physics, Alagappa Arts College, Karaikudi 630003, India
      3. Department of Physics, Sree Sevugan-Annamalai College, Devakottai 630303, India
    • Dates

  • Bulletin of Materials Science | News

    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

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