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      https://www.ias.ac.in/article/fulltext/boms/039/06/1435-1440

    • Keywords

       

      Spin–orbit interaction; barrier transparency; polarization efficiency; tunnelling lifetime.

    • Abstract

       

      The effect of ‘Al’ concentration on spin-dependent tunnelling in strained non-magnetic symmetric double-barrier semiconductor has been theoretically investigated. The separation between spin-up and spin-down components, barrier transparency, polarization efficiency and tunnelling lifetime were calculated using the transfer matrix approach. The separation between spin-up and spin-down resonances and tunnelling lifetime were reportedfor the first time in the case of InAs/Ga$_{1−y}$Al$_y$As heterostructures for various ‘Al’ concentrations and for various barrier widths. Cent percentage polarization can be obtained in this strained non-magnetic double-barriersemiconductor even without any external field.

    • Author Affiliations

       

      L BRUNO CHANDRASEKAR1 K GNANASEKAR1 M KARUNAKARAN2 R CHANDRAMOHAN3

      1. Department of Physics, The American College, Madurai 625002, India
      2. Department of Physics, Alagappa Arts College, Karaikudi 630003, India
      3. Department of Physics, Sree Sevugan-Annamalai College, Devakottai 630303, India
    • Dates

       
  • Bulletin of Materials Science | News

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