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    • Nanoscaled In$_2$O$_3$:Sn films as material for thermoelectric conversion: achievements and limitations

      G KOROTCENKOV V BRINZARI B K CHO

      Volume 39 Issue 5 September 2016 pp 1349-1354

    • Fulltext

       

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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/039/05/1349-1354

    • Keywords

       

      Power factor; filtering effect; stability; doping; conductivity; grain size.

    • Abstract

       

      In this paper, thermoelectric properties of nanoscaled In$_2$O$_3$:Sn films are considered. The limitations that may appear during the usage of such materials in devices developed for the market of thermoelectric generatorsand refrigerators are also analysed. It is shown that nanoscaled In$_2$O$_3$:Sn is a promising material for thermoelectric applications. It is also established that insufficient thermal stability of nanostructured materials is themain limitation of these materials application in high-temperature thermoelectric converters. Optimization of grain boundary parameters and the usage of specific surrounding atmosphere can significantly improve the efficiency of thermoelectric conversion of nanostructured materials in the region of intermediate temperatures.

    • Author Affiliations

       

      G KOROTCENKOV1 V BRINZARI2 B K CHO1

      1. School of Material Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500712, Republic of Korea
      2. Department of Theoretical Physics, State University of Moldova, Chisinau, Republic of Moldova

    • Dates

       
      Published
      15 September 2016
      Manuscript received
      6 January 2016
      Accepted
      10 March 2016

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