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RF sputtering; amorphous; CuFeO$_2$; p–n heterojunction.

Transparent conducting amorphous p-type CuFeO$_2$ (CFO) thin film was prepared by radio-frequency (RF) magnetron sputtering method at room temperature using polycrystalline CuFeO$_2$ target. Amorphous structureof as-deposited film was confirmed by XRD. XPS analysis convinced that the chemical state of Cu$^{+}$ and Fe$^{3+}$ in the film, and the chemical composition of the thin films is close to the stoichiometry of CuFeO$^2$. Surface morphology of the film was analysed by SEM studies. p-type nature and concentration of carriers was investigated by Hall effect measurement. The p–n heterojunction in the structure of Al/n-Si/p-CuFeO$_2$/Al showed good rectifying behaviour with a forward and reverse currents ratio of 555 at 2 V. The turn-on voltage and reverse leakage current values were found to be 0.9 V and 4 $\mu$A at $−$2 V. Further, the conduction mechanism of forward bias voltage was controlled by thermionic emission (TE) and trap-space charge limited current (TCLC) mechanisms.

TAO ZHU^{1 2 3} ZANHONG DENG^{1 2} XIAODONG FANG^{1 2 3} WEIWEI DONG^{1 2} JINGZHEN SHAO^{1 2} RUHUA TAO^{1 2} SHIMAO WANG^{1 2}

1. Anhui Provincial Key Lab of Photonics Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China
2. Key Lab of Novel Thin Film Solar Cells, Chinese Academy of Sciences, Hefei 230031, China
3. University of Science and Technology of China, Hefei 230026, China

Published

15 June 2016

Manuscript received

14 October 2015

Accepted

28 December 2015