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      https://www.ias.ac.in/article/fulltext/boms/039/03/0883-0887

    • Keywords

       

      RF sputtering; amorphous; CuFeO$_2$; p–n heterojunction.

    • Abstract

       

      Transparent conducting amorphous p-type CuFeO$_2$ (CFO) thin film was prepared by radio-frequency (RF) magnetron sputtering method at room temperature using polycrystalline CuFeO$_2$ target. Amorphous structureof as-deposited film was confirmed by XRD. XPS analysis convinced that the chemical state of Cu$^{+}$ and Fe$^{3+}$ in the film, and the chemical composition of the thin films is close to the stoichiometry of CuFeO$^2$. Surface morphology of the film was analysed by SEM studies. p-type nature and concentration of carriers was investigated by Hall effect measurement. The p–n heterojunction in the structure of Al/n-Si/p-CuFeO$_2$/Al showed good rectifying behaviour with a forward and reverse currents ratio of 555 at 2 V. The turn-on voltage and reverse leakage current values were found to be 0.9 V and 4 $\mu$A at $−$2 V. Further, the conduction mechanism of forward bias voltage was controlled by thermionic emission (TE) and trap-space charge limited current (TCLC) mechanisms.

    • Author Affiliations

       

      TAO ZHU1 2 3 ZANHONG DENG1 2 XIAODONG FANG1 2 3 WEIWEI DONG1 2 JINGZHEN SHAO1 2 RUHUA TAO1 2 SHIMAO WANG1 2

      1. Anhui Provincial Key Lab of Photonics Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China
      2. Key Lab of Novel Thin Film Solar Cells, Chinese Academy of Sciences, Hefei 230031, China
      3. University of Science and Technology of China, Hefei 230026, China
    • Dates

       
  • Bulletin of Materials Science | News

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