• Low-temperature localization in the transport properties of self-doped La$_{0.9}$Mn$_{0.98}$Zn$_{0.02}$O$_3$

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    • Keywords


      Transport properties; scattering mechanisms; low temperature localization.

    • Abstract


      Low-temperature transport properties are investigated in the self-doped compound, La$_{0.9}$Mn$_{0.98}$Zn$_{0.02}$O$_3$. The analysis of the low-temperature resistivity is performed considering various scattering mechanisms. The parameters involved with different scattering processes such as electron–electron, Kondo, electron–phonon and electron–magnon are found to be strongly influenced by the applied magnetic field. The results suggest that interplay between electron–electron and Kondo-like scatterings lead to the localization in the temperature dependence of resistivity at low temperature.

    • Author Affiliations


      K De1 S Das2

      1. Neotia Institute of Technology, Management and Science, Jhinga 743 368, India
      2. Department of Electronics and Communication Engineering, Guru Ghasidas Central University, Bilaspur (C.G.) 495 009, India
    • Dates

  • Bulletin of Materials Science | News

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      Posted on July 25, 2019

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