This paper reports the optimization of the molybdenum thin film electrode as the back contact of dye-sensitized solar cell (DSSC). The molybdenum thin film was grown on the glass substrate by direct current sputtering techniques of which the sputtering power was 150Wat 18 sccm flow rate of Ar. At such sputtering parameters, the Mo film can reach the lowest resistivity of 1.28E−6𝛺 cm at 400 nm thick. And the reflection of Mo membrane was 82%. This value is considered as a very good result for preparation of the back contact of DSSC.
Volume 43, 2020
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