• Lattice dynamical properties of MnTe, HgTe and their mixed semiconductor Mn𝑥Hg1−𝑥Te

    • Fulltext

       

        Click here to view fulltext PDF


      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/038/07/1765-1769

    • Keywords

       

      Chalcogenides; semiconductor; phonons; thermodynamic properties.

    • Abstract

       

      In the present paper, the phonon dispersion relations, phonon density of states and Debye characteristics of mixed semiconductor Mn𝑥Hg1−𝑥Te and the end members MnTe and HgTe using three-body shell model were studied. The model involves 11 disposable parameters and incorporates the effect of the short-range repulsive interactions up to and including the second nearest neighbours, in addition to the long-range Coulombic interactions in the framework of the rigid-shell model with both the ions polarizable. The comparisons of the theoretical results with the available experimental results were in good agreement.

    • Author Affiliations

       

      A K Kushwaha1

      1. Department of Physics, K.N. Government P.G. College Gyanpur, Bhadohi 221 304, India
    • Dates

       
  • Bulletin of Materials Science | News

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2017-2019 Indian Academy of Sciences, Bengaluru.