Lattice dynamical properties of MnTe, HgTe and their mixed semiconductor Mn𝑥Hg1−𝑥Te
In the present paper, the phonon dispersion relations, phonon density of states and Debye characteristics of mixed semiconductor Mn𝑥Hg1−𝑥Te and the end members MnTe and HgTe using three-body shell model were studied. The model involves 11 disposable parameters and incorporates the effect of the short-range repulsive interactions up to and including the second nearest neighbours, in addition to the long-range Coulombic interactions in the framework of the rigid-shell model with both the ions polarizable. The comparisons of the theoretical results with the available experimental results were in good agreement.
Volume 42 | Issue 6
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