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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/038/05/1429-1433

    • Keywords

       

      Electron beam melting; silicon; oxygen; removal; electrical resistivity.

    • Abstract

       

      This research deals with the study of electron beam melting (EBM) methodology utilized in melting silicon material and subsequently discusses on the effect of oxygen level on electrical resistivity change after EBM process. The oxygen content was reduced from 6.177 to less than 0.0517 ppmw when refining time exceeded 10 min with removal efficiency of more than 99.08%. The average value of electrical resistivity of silicon before EBM processing was recorded to be 2.25 𝛺 cm but with the increase in melting time that was applied through EBM, the electrical resistivity was recorded to go high in the range of 4–13 𝛺 cm for different regions. The electrical resistivity values were greater in the top and the bottom regions, whereas lowest in the central region at all conditions of melting time. It is the result of the evaporation of oxygen during melting process and the segregation of metal impurities during solidification.

    • Author Affiliations

       

      Hafiz Muhammad Noor Ul Huda Khan Asghar1 2 3 Shuang Shi1 2 Dachuan Jiang1 2 Yi Tan1 2

      1. School of Materials Science and Engineering, Dalian University of Technology, Dalian 116023, PR China
      2. Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province, Dalian 116023, PR China
      3. Department of Physics, Balochistan University of Information Technology, Engineering and Management Sciences, Quetta 87300, Pakistan

    • Dates

       
      Published
      September 2015
      Manuscript received
      26 November 2014
      Accepted
      12 May 2015

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