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      https://www.ias.ac.in/article/fulltext/boms/038/04/1055-1059

    • Keywords

       

      Surface measurement; ZrO2 array; C-AFM; resistive switching.

    • Abstract

       

      In this paper, a comparison of the interfacial electronic properties between Pt/Ir conductive atomic force microscopy (C-AFM) tip and ZrO2 organic array was carried out. A uniformed ZrO2 array was fabricated with a mean diameter of around 1 𝜇m using laser interference lithography. A C-AFM measurement set-up was built up. The 𝐼-𝑉 curve was directly measured of the organic ZrO2 array which shows a resistive switching characteristic by C-AFM measurement. The set voltage is 18.0 V and the reset voltage is −5.0 V. After the Pt layer was coated on the ZrO2 array, the set voltage decreases to 0.8 V and the reset voltage decreases to −2.2 V. This result shows that Pt layer can prevent the potential drop effectively. The electron barrier height between Pt/Ir C-AFM tip and organic ZrO2 array was enhanced by sputtering Pt layer on the ZrO2 organic array.

    • Author Affiliations

       

      Ying Li1 Gaoyang Zhao2 Zhibo Kou3 Long Jin2 Yajing Wang2

      1. Advanced Material Analysis Center, Xi’an University of Technology, Xi’an, Shaanxi 710048, China
      2. Material Science and Engineering School, Xi’an University of Technology, Xi’an, Shaanxi 710048, China
      3. Northwest Electric Power Design Institute of China Power Engineering Consulting Group, Xi’an, Shaanxi 710075, China
    • Dates

       
  • Bulletin of Materials Science | News

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