Click here to view fulltext PDF
Permanent link:
https://www.ias.ac.in/article/fulltext/boms/038/04/1043-1048
The semiconducting properties of La2CuO4 prepared by a chemical route are investigated for the first time by the photo-electrochemical technique. The optical gap is found to be 1.27 eV and the transition is directly allowed. p-Type conductivity is demonstrated from the Mott–Schottky plot in alkaline KOH solution (0.1 M), extrapolation of the linear region to the potential axis gives a flat band potential of −0.41 VSCE, a holes density of 1.75 × 1019 cm−3 and a space-charge region of 18 nm. The electrochemical impedance spectroscopy, measured over the frequency range (1 mHz–105 Hz), reveals the predominance of the bulk contribution with a constant phase element. The energy diagram shows the feasibility of La2CuO4 for the H2 evolution under visible light. The best performance occurs at pH 12.5 in the presence of S2O$^{2-}_{3}$ as holes scavenger. A liberation rate of 20.6 𝜇mol mn−1 (g catalyst)−1 is obtained under full light (29 mW cm−2).
Volume 46, 2023
All articles
Continuous Article Publishing mode
Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020
Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
Physical Sciences 2020
Click here for Editorial Note on CAP Mode
© 2022-2023 Indian Academy of Sciences, Bengaluru.