Interface behaviour and electrical performance of ruthenium Schottky contact on 4H-SiC after argon annealing
Kinnock V munthali Chris Theron F Danie Auret Sergio M M Coelho
Click here to view fulltext PDF
Permanent link:
https://www.ias.ac.in/article/fulltext/boms/038/03/0711-0715
Rutherford backscattering spectrometry (RBS) analysis, carried out at various annealing temperatures, of a thin film of ruthenium on n-type four-hexagonal silicon carbide (4H-SiC) showed the evidence of ruthenium oxidation, ruthenium silicide formation and diffusion of ruthenium into silicon carbide starting from an annealing temperature of 400° C. Ruthenium oxidation was more pronounced, and ruthenium and silicon interdiffusion was very deep after annealing at 800° C. Raman analysis of some samples also showed ruthenium silicide formation and oxidation. The Schottky barrier diodes showed very good linear capacitance–voltage characteristics and excellent forward current–voltage characteristics, despite the occurrence of the chemical reactions and interdiffusion of ruthenium and silicon at ruthenium–silicon–carbide interface, up to an annealing temperature of 800° C.
Kinnock V munthali1 2 Chris Theron1 F Danie Auret1 Sergio M M Coelho1
Volume 46, 2023
All articles
Continuous Article Publishing mode
Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020
Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
Physical Sciences 2020
Click here for Editorial Note on CAP Mode
© 2022-2023 Indian Academy of Sciences, Bengaluru.