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    • Keywords

       

      Rutherford backscattering spectrometry; Raman spectroscopy; oxidation; silicide; Schottky barrier diodes; ruthenium; 4H-SiC.

    • Abstract

       

      Rutherford backscattering spectrometry (RBS) analysis, carried out at various annealing temperatures, of a thin film of ruthenium on n-type four-hexagonal silicon carbide (4H-SiC) showed the evidence of ruthenium oxidation, ruthenium silicide formation and diffusion of ruthenium into silicon carbide starting from an annealing temperature of 400° C. Ruthenium oxidation was more pronounced, and ruthenium and silicon interdiffusion was very deep after annealing at 800° C. Raman analysis of some samples also showed ruthenium silicide formation and oxidation. The Schottky barrier diodes showed very good linear capacitance–voltage characteristics and excellent forward current–voltage characteristics, despite the occurrence of the chemical reactions and interdiffusion of ruthenium and silicon at ruthenium–silicon–carbide interface, up to an annealing temperature of 800° C.

    • Author Affiliations

       

      Kinnock V munthali1 2 Chris Theron1 F Danie Auret1 Sergio M M Coelho1

      1. Department of Physics, University of Pretoria, Pretoria 0002, South Africa
      2. Department of Mathematics, Science and Sports Education, University of Namibia, HP Campus, P/Bag 5507, Oshakati, Namibia
    • Dates

       
  • Bulletin of Materials Science | News

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