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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/038/01/0105-0109

    • Keywords

       

      MnZnO3; resistive switching; annealing temperature; sol–gel.

    • Abstract

       

      Single-phase MnZnO3 films were prepared on glass substrates coated with the use of indium tin oxide (ITO) as transparent bottom electrode via the sol–gel method. The effects of annealing temperature on structure, resistance switching behaviour and endurance characteristics of the ZnMnO3 films were investigated. The stable resistive switching behaviour with high resistance ratio in Ag/ZnMnO3/ITO unsymmetrical structure was observed. No second phase is detected, and the crystallinity of the MnZnO3 films is improved with the increase in annealing temperature from 350 to 400°C. The MnZnO3 films annealed at 350–450°C with an Ag/MnZnO3/ITO structure exhibit bipolar resistive switching behaviour. Ohmic and space-charge-limited conductions are the dominant mechanisms at low and high resistance states, respectively. $V{}_{\text{ON}},\ \text{V_{OFF}}$ and $R_{\text{HRS}}/R_{\text{LRS}}$ of theMnZnO3 films increase with the increase in annealing temperature. Improved endurance characteristics are observed in the samples annealed at 350 and 400°C. The endurance of the MnZnO3 films degrades when annealed at >450°C.

    • Author Affiliations

       

      Hua Wang1 2 Shu-Ming Gao1 Ji-Wen Xu1 2 Chang-Lai Yuan1 2 Xiao-Wen Zhang1 2

      1. School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
      2. Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, China

    • Dates

       
      Published
      February 2015
      Manuscript received
      2 January 2014
      Manuscript revised
      20 April 2014

  • Bulletin of Materials Science | News

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