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https://www.ias.ac.in/article/fulltext/boms/037/07/1725-1729

Pr and Gd co-modified BiFeO₃ thin film; ferroelectric properties; sol-gel.

Pr and Gd co-modified Bi_0.95−𝑥Pr_𝑥Gd_0.05FeO₃ (𝑥 = 0.00, 0.05, 0.10) (BPGFO) thin films on Pt(111)/Ti/SiO₂/Si(100) substrates were prepared by a sol-gel together with spin coating technique. A detailed study of electrical and magnetic properties of these thin films is reported. X-ray diffraction analysis shows that, with an increase in Pr content, the crystal structures of BPGFO thin films retain rhombohedral (R3c) symmetry accompanied by structure distortion. Polarization-electric field hysteresis loops of these thin films demonstrate that the incorporation of Pr and Gd into the Bi site of BiFeO₃ thin film could enhance the ferroelectric performance. Compared to other thin films, the optimal ferroelectric behaviours in Bi_0.85Pr_0.1Gd_0.05FeO₃ thin film are ascribed to its large dielectric constant, low dissipation factor and low leakage current density. Room temperature magnetization-magnetic field curves of these thin films indicate that all the samples are of paramagnetic behaviours and the enhanced saturation magnetic properties can be found.

Chang Chun Chen¹ Zi Xuan Liu¹ Gui Wang¹ Yi Lin Yan¹

1. College of Materials Science and Engineering, Nanjing University of Technology, No. 5 Xinmofan Road, Nanjing 210009, China

Published

December 2014

Manuscript received

21 October 2013

Manuscript revised

25 January 2014