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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/037/07/1725-1729

    • Keywords

       

      Pr and Gd co-modified BiFeO3 thin film; ferroelectric properties; sol-gel.

    • Abstract

       

      Pr and Gd co-modified Bi0.95−𝑥Pr𝑥Gd0.05FeO3 (𝑥 = 0.00, 0.05, 0.10) (BPGFO) thin films on Pt(111)/Ti/SiO2/Si(100) substrates were prepared by a sol-gel together with spin coating technique. A detailed study of electrical and magnetic properties of these thin films is reported. X-ray diffraction analysis shows that, with an increase in Pr content, the crystal structures of BPGFO thin films retain rhombohedral (R3c) symmetry accompanied by structure distortion. Polarization-electric field hysteresis loops of these thin films demonstrate that the incorporation of Pr and Gd into the Bi site of BiFeO3 thin film could enhance the ferroelectric performance. Compared to other thin films, the optimal ferroelectric behaviours in Bi0.85Pr0.1Gd0.05FeO3 thin film are ascribed to its large dielectric constant, low dissipation factor and low leakage current density. Room temperature magnetization-magnetic field curves of these thin films indicate that all the samples are of paramagnetic behaviours and the enhanced saturation magnetic properties can be found.

    • Author Affiliations

       

      Chang Chun Chen1 Zi Xuan Liu1 Gui Wang1 Yi Lin Yan1

      1. College of Materials Science and Engineering, Nanjing University of Technology, No. 5 Xinmofan Road, Nanjing 210009, China

    • Dates

       
      Published
      December 2014
      Manuscript received
      21 October 2013
      Manuscript revised
      25 January 2014

  • Bulletin of Materials Science | News

    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

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      Posted on July 25, 2019

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