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ZnMn₂O₄; bipolar; resistive switching; chemical solution deposition.

ZnMn₂O₄ active layer for resistance random access memory (RRAM) was deposited on p⁺-Si substrate by chemical solution deposition. The bipolar resistive switching behaviours of the Ag/ZnMn₂O₄/p⁺-Si capacitor are investigated. The bipolar resistive switching is reproducible and shows high ON/OFF ratio of > 10² and long retention times of > 10⁵ s. The conduction mechanism of the Ag/ZnMn₂O₄/p⁺-Si capacitor in the low-resistance state (LRS) is ohmic conduction, whereas that of the device in high-resistance state (HRS) successively undergoes Ohm’s law, trap-filled-limited and Child’s law conduction procedure at room temperature.

Jiwen Xu^{1 2} Zupei Yang¹ Yupei Zhang² Xiaowen Zhang² Hua Wang²

1. School of Material Science and Engineering, Shaanxi Normal University, Xi’an 710062, P R China
2. School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, P R China

Published

December 2014

Manuscript received

4 January 2014

Manuscript revised

24 March 2014