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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/037/07/1657-1661

    • Keywords

       

      ZnMn2O4; bipolar; resistive switching; chemical solution deposition.

    • Abstract

       

      ZnMn2O4 active layer for resistance random access memory (RRAM) was deposited on p+-Si substrate by chemical solution deposition. The bipolar resistive switching behaviours of the Ag/ZnMn2O4/p+-Si capacitor are investigated. The bipolar resistive switching is reproducible and shows high ON/OFF ratio of > 102 and long retention times of > 105 s. The conduction mechanism of the Ag/ZnMn2O4/p+-Si capacitor in the low-resistance state (LRS) is ohmic conduction, whereas that of the device in high-resistance state (HRS) successively undergoes Ohm’s law, trap-filled-limited and Child’s law conduction procedure at room temperature.

    • Author Affiliations

       

      Jiwen Xu1 2 Zupei Yang1 Yupei Zhang2 Xiaowen Zhang2 Hua Wang2

      1. School of Material Science and Engineering, Shaanxi Normal University, Xi’an 710062, P R China
      2. School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, P R China

    • Dates

       
      Published
      December 2014
      Manuscript received
      4 January 2014
      Manuscript revised
      24 March 2014

  • Bulletin of Materials Science | News

    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

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