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      https://www.ias.ac.in/article/fulltext/boms/037/03/0579-0583

    • Keywords

       

      Carbon materials; chemical vapour deposition; crystal growth; thin films; electrical resistivity; grain size.

    • Abstract

       

      Polycrystalline diamond thin films with outgrowing diamond (OGD) grains were deposited onto silicon wafers using a hydrocarbon gas (CH4) highly diluted with H2 at low pressure in a hot filament chemical vapour deposition (HFCVD) reactor with a range of gas flow rates. X-ray diffraction (XRD) and SEM showed polycrystalline diamond structure with a random orientation. Polycrystalline diamond films with various textures were grown and (111) facets were dominant with sharp grain boundaries. Outgrowth was observed in flowerish character at high gas flow rates. Isolated single crystals with little openings appeared at various stages at low gas flow rates. Thus, changing gas flow rates had a beneficial influence on the grain size, growth rate and electrical resistivity. CVD diamond films gave an excellent performance for medium film thickness with relatively low electrical resistivity and making them potentially useful in many industrial applications.

    • Author Affiliations

       

      Mahtab Ullah1 Ejaz Ahmed1 Abdelbary Elhissi2 Waqar Ahmed2

      1. Department of Physics, Bahauddin Zakariya University, Multan, Pakistan
      2. Institute of Nanotechnology and Bioengineering, University of Central Lancashire, Preston PR1 2HE, United Kingdom
    • Dates

       
  • Bulletin of Materials Science | News

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